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| 2SK1521, 2SK1522 Silicon N-Channel MOS FET Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1521, 2SK1522 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1521 2SK1522 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 30 50 200 50 250 150 -55 to +150 Unit V V A A A W C C 2 2SK1521, 2SK1522 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol Min 2SK1521 V(BR)DSS 2SK1522 V(BR)GSS I GSS 450 500 30 -- -- -- -- -- -- 10 250 V A A I G = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 -- -- |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 22 -- -- -- -- -- -- -- -- -- -- 0.08 0.085 35 8700 2400 235 85 250 600 250 1.1 120 3.0 0.10 0.11 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns I F = 50 A, VGS = 0 I F = 50 A, VGS = 0, diF/dt = 100 A/s I D = 25 A, VGS = 10 V, RL = 1.2 I D = 25 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V I D = 1 mA, VDS = 10 V I D = 25 A, VGS = 10 V *1 Typ -- Max -- Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1521 I DSS 2SK1522 Gate to source cutoff voltage Static Drain to source 2SK1521 RDS(on) on state resistance 2SK1522 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test 3 2SK1521, 2SK1522 Power vs. Temperature Derating 300 Channel Dissipation Pch (W) 1,000 300 Drain Current ID (A) 100 30 10 3 1 0.3 Ta = 25C 0.1 0 50 100 Case Temperature TC (C) 150 1 rea sa thi on) in R DS ( n tio by era ted DC Op limi is Maximum Safe Operation Area 200 PW er at 10 10 0 = Op 10 (T 1m m s( 1 s s s ot ion Sh 100 C = ) 25 C ) 2SK1521 2SK1522 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 100 8V 10 V 80 Drain Current ID (A) Pulse Test 5.5 V 60 5V 6V 80 Drain Current ID (A) 100 Typical Transfer Characteristics VDS = 20 V Pulse Test 60 40 40 20 4.5 V VGS = 4 V 20 TC = 75C 25C -25C 0 4 12 16 8 20 Drain to Source Voltage VDS (V) 0 2 6 8 4 10 Gate to Source Voltage VGS (V) 4 2SK1521, 2SK1522 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) () 5 50 A Pulse Test 1 Pulse Test 0.5 Static Drain to Source on State Resistance vs. Drain Current 4 3 0.2 0.1 0.05 VGS = 10, 15 V 2 20 A ID = 10 A 1 0.02 0.01 5 10 20 50 100 200 Drain Current ID (A) 500 0 4 12 16 8 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Pulse Test 0.4 Forward Transfer Admittance yfs (S) 0.5 50 Forward Transfer Admittance vs. Drain Current 20 10 5 TC = -25C 25C 75C 0.3 ID = 50 A 20 A 0.2 2 1 VDS = 20 V Pulse Test 1 2 5 10 20 Drain Current ID (A) 50 0.1 10 A 0 -40 0 80 120 40 Case Temperature TC (C) 160 0.5 0.5 5 2SK1521, 2SK1522 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 10,000 Ciss 200 Capacitance C (pF) 100 50 di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test 1,000 Coss Typical Capacitance vs. Drain to Source Voltage 20 10 100 Crss VGS = 0 f = 1 MHz 10 5 0.5 1 2 5 10 20 Reverse Drain Current IDR (A) 50 0 20 10 30 40 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) VDD = 100 V 250 V 400 V 300 VDS 200 ID = 50 A 100 VDD = 400 V 250 V 100 V 0 80 240 320 160 Gate Charge Qg (nc) 400 0 4 8 VGS 12 20 Gate to Source Voltage VGS (V) 5,000 Switching Characteristics . VGS = 10 V, VDD = 30 V . PW = 2 s, duty < 1% Switching Time t (ns) 400 16 2,000 1,000 500 tf 200 100 50 0.5 tr td (on) td (off) 1 2 5 10 20 Drain Current ID (A) 50 6 2SK1521, 2SK1522 Reverse Drain Current vs. Source to Drain Voltage 100 Reverse Drain Current IDR (A) Pulse Test 80 60 40 VGS = 0, -5 V 10 V 20 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C 1 D=1 0.5 0.3 0.1 0.2 0.1 ch-c (t) = S (t) * ch-c ch-c = 0.5C/W, TC = 25C PDM lse t Pu 0.05 0.02 0.03 0.01 1 Sh o T 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 0.01 10 100 10 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vout 50 Vin 10 V VDD . = 30 V . td (on) 10% Vin 10% Waveforms 90% 10% 90% td (off) 90% tr tf 7 Unit: mm 6.0 0.2 5.0 0.2 3.3 0.2 20.0 0.3 26.0 0.3 20.0 0.6 2.5 0.3 1.4 3.0 2.2 1.2 +0.25 -0.1 5.45 0.5 1.0 0.6 +0.25 -0.1 2.8 0.2 5.45 0.5 3.8 7.4 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3PL -- -- 9.9 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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